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Al2O3moq :
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Sapphire crystal has good thermal properties, excellent electrical properties and dielectric properties, And good thermostability, Thermal conductivity, Infrared permeability, chemical stability, High hardness, anti-chemical corrosion, Sapphire,Al2O3 are widely used in industrial, national defense and scientific research (such as high-temperature infrared windows, etc.). It is also a extensive use in monocrystalline substrate material.
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The main performance parameters
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| Product Name | Sapphire single crystal substrate, Sapphire wafer, Al2O3 wafer | ||
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Crystal Structure
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Hexagonal system
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Orientation
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C-plane (0001), A-plane (11-20), M-plane (10-10), R-plane (1-102)
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Lattice Constant
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a=4.748Å c=12.97Å
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Density
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3.98（g/cm3）
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Melting Point
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2040℃
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Mohs Hardness
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9
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Coefficient of Thermal expansion
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7.5 (x10-6/ oC)
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Thermal conductivity
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⊥c
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//c
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23℃
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0.055
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26℃ 0.060
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77℃
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0.040
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70℃ 0.041
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Dielectric Constant
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~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
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Packing
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Class-100 Clean bag, in class-1000 clean room
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| Standard Specification | |||||
| Product Name | Orientation | Standard Size | Thickness | Polishing | |
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Sapphire substrate Sapphire wafer |
<0001> ±0.3° <11-20> ±0.3° <10-10> ±0.3° <1-102> ±0.3° Or other off-angle |
10x10mm 10x5mm 5x5mm 20x20mm 100x100mm φ1" x 0.5mm φ2" x 0.43mm φ3" x 0.5mm φ4" x 0.65mm φ6" x 1.0mm Or others |
0.1mm 0.2mm 0.5mm 1.0mm 2.0mm Or others |
Fine ground Single side polished Double side polished Roughness: Ra<3A(0.3nm) (Epi-ready) |
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