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Aluminum oxide Wafer Al2O3 Crystal Substrate

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  • item no :

    Al2O3
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    1
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    In Stock
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product details

Aluminum oxide Wafer Al2O3 Crystal Substrate

Sapphire crystal has good thermal properties, excellent electrical properties and dielectric properties, And good thermostability, Thermal conductivity, Infrared permeability, chemical stability, High hardness, anti-chemical corrosion,  Sapphire,Al2O3 are widely used in industrial, national defense and scientific research (such as high-temperature infrared windows, etc.). It is also a extensive use in monocrystalline substrate material.



The main performance parameters
Product Name Sapphire single crystal substrate, Sapphire wafer, Al2O3 wafer
Crystal Structure
Hexagonal system
Orientation
C-plane (0001), A-plane (11-20), M-plane (10-10), R-plane (1-102)
Lattice Constant
a=4.748Å  c=12.97Å
Density
3.98(g/cm3)
Melting Point
2040℃
Mohs Hardness
9
Coefficient of Thermal expansion
7.5  (x10-6/ oC)
Thermal conductivity
 
⊥c
//c
23℃
0.055
26℃ 0.060
77℃
0.040
70℃ 0.041
Dielectric Constant
~ 9.4 @300K  at A axis ~ 11.58@ 300K at C axis
Packing
Class-100 Clean bag, in class-1000 clean room

 

Standard Specification
Product Name Orientation Standard Size Thickness Polishing  
Sapphire substrate
Sapphire wafer
<0001> ±0.3°
<11-20> ±0.3°
<10-10> ±0.3°
<1-102> ±0.3°
Or other off-angle
10x10mm
10x5mm
5x5mm
20x20mm
100x100mm
φ1" x 0.5mm
φ2" x 0.43mm
φ3" x 0.5mm
φ4" x 0.65mm
φ6" x 1.0mm
Or others
0.1mm
0.2mm
0.5mm
1.0mm
2.0mm
Or others
Fine ground
Single side polished
Double side polished

Roughness: Ra<3A(0.3nm)
(Epi-ready)
Inquiry Online


Al2O3 substrate

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