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SOI wafer is mean the Silicon-On-Insulator wafer which is silicon on an insulating substrate (Si + SiO2 + Si), and a buried oxide layer is introduced between the top silicon and the back substrate.
By forming a semiconductor thin film on an insulator, SOI wafer materials have advantages that are incomparable to bulk silicon: It can realize the dielectric isolation of components in integrated circuits, completely eliminating the parasitic latch-up effect in bulk silicon CMOS circuits. The integrated circuit made of SOI also has the advantages of small parasitic capacitance, high integration density, high speed, simple process, smaller short channel effect, and especially suitable for low voltage and low power circuits. SOI will become the mainstream technology for deep submicron low voltage, low power integrated circuits. In addition, SOI materials are also used to fabricate MEMS optical switches,
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Silicon-On-Insulator (SOI) wafer |
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Structure |
Si + SiO2 + Si |
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Standard Diameter |
4-inch(100mm), 6-inch(150mm), 8-inch(200mm) |
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Orientation |
<100> |
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Type/Dopant |
P-type/B-doped, N-type/P-doped |
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Handle wafer thickness |
400um, 675um, 725um |
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Resistivity |
1~20 ohm-cm, 1~100 ohm-cm, 0.001~0.005 ohm-cm or others |
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Buried Oxide layer |
500nm, 1um, 2um, 3um |
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Device layer |
70nm, 220nm, 340nm, 2um, 10um, 30um, 80um |
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Orientation |
<100> |
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Type/Dopant |
P-type/B-doped, N-type/P-doped, |
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Resistivity |
1~20 ohm-cm, 1~100 ohm-cm, 0.001~0.005 ohm-cm or others |

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