item no :
LiGaO2moq :
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The main performance parameters |
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Product Name: |
LiGaO2 single crystal substrate |
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Growth method |
Czochralski method |
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Crystal Structure : |
Orthogonal system |
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Lattice constant: |
a=5.406 Å b=5.012 Å c=6.379 Å |
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Melting point: |
1600 ℃ |
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Density: |
4.18g/cm3 |
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Mohs hardness |
7.5 |
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Orientation |
<100>, <001> |
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Standard Size |
10x10x0.5mm, 5x5x0.5mm |
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Polishing |
Single side polished or Double side polished |
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Packing |
class-100 clean bag, in class-1000 clean room |
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Application |
LiGaO2 substrate and GaN film are well matched, and can obtain a good gallium nitride film |

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