Gallium Nitride on Silicon Wafer Single Crystal Substrate

Standard Specification

ITEM

Gallium Nitride on Silicon wafer, GaN on Silicon wafer

GaN thin film

0.5μm ± 0.1 μm

GaN orientation

C-plane (0001)

Ga-face

<1nm, As-grown, EPI-ready

N-face

P-type/B-doped

Polarity

Ga-face

Conductivity type

Undoped/N-type

Macro defect density

Silicon wafer substrate

Orientation

<100>

Conductivity type

N-type/P-doped or P-type/B-doped

Dimension:

10 x 10 x 0.5mm, Single side polished
Dia. 2” x 0.5mm, Single side polished
Dia. 4" x 0.525mm, Single side polished

Resistivity

1-5 ohm-cm, 0-10 ohm-cm, <0.005 ohm-cm or others