Substrate material

Single crystal Gallium Phosphide (GaP)

Crystal structure

Cubic        a =5.4505 Å

Growth method

Czochralski (CZ)

 Density:

4.13  g/cm3

Melting point:

1480 ℃

Coefficient of thermal expansion:

5.3 x10-6

Doping:

S-doped/N-type; Undoped/N-type

Thermal conductivity:

2~8 x1017/cm3; 4~ 6 x1016/cm3

Resistivity (W.cm)

~0.03; ~0.3

EPD (cm-2 )：

 < 3x10E5; < 3x10E5

Standard Orientation

 <111> or <100>

Standard size

 10x10x0.5mm, Dia2"x0.5mm, Dia2"x0.28mm

Polishing

 Single side polished or Double side polished