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Silicon Wafer Si Crystal Substrate

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Silicon wafer

Silicon Wafer Si Crystal Substrate

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    Silicon-wafer/substr

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Silicon Wafer Si Crystal Substrate

Silicon wafer can be used in the production and deep processing of diodes, rectifier devices, circuits, and solar cell products. Its subsequent product integrated circuits and semiconductor separation devices have been widely used in various fields, and also occupy an important position in military electronic equipment.

Silicon wafer for manufacturing semiconductor Silicon devices for high power rectifiers, high power transistors, diodes, switching devices, and the like. It is a promising material in the development of energy. The growth methods of single crystal Silicon include Czochralski method (CZ), Floating Zone method (FZ), and epitaxial method. The Czochralski Monocrystalline Silicon wafer is mainly used for a semiconductor integrated circuit, a diode, an epitaxial wafer substrate, and a solar cell.


The main performance parameter
Crystal Structure
Cubic
Melting point（℃）
1420
Density
2.4（g/cm3）
Growth method
Float Zone (FZ)
Czochralski (CZ)
magnetic field Czochralski method (MCZ)
Dopant
 Un-doped
Boron-doped
Phos-doped / As-doped
Conductivity Type
 Intrinsic
P-type
N-type
Resistivity
>1000 Ω-cm
>10000 Ω-cm
0.001~0.005 Ω-cm
0.01~0.09 Ω-cm
0.1~0.9 Ω-cm
1~10 Ω-cm
20~100 Ω-cm
0.001~0.005 Ω-cm
0.01~0.09 Ω-cm
0.1~0.9 Ω-cm
1~10 Ω-cm
20~100 Ω-cm
EPD
/
/
/
Oxygen Content（/cm3）
≤8x1017
≤8x1017
≤8x1017
Carbon Content（/cm3）
≤5x1016
≤5x1016
≤5x1016
Packing
Class-100 clean bag,   class-1000 clean room
Special specification
We can customize Specific spcification upon requirements

 

Standard Specification
Product Name Orientation Standard Size Thickness Polishing  
Silicon substrate/wafer

(Un-doped or P-type or N-type) 		<100> ±0.5°
<110> ±0.5°
<111> ±0.5°
<211> ±0.5°


Or other off-angle
  		10x10mm
10x5mm
5x5mm
20x20mm
φ2" x 0.28mm
φ3" x 0.38mm
φ4" x 0.5mm
φ6" x 0.625mm
φ8" x 0.725mm
φ12" x 0.775mm
Or others 		0.1mm
0.2mm
0.28mm
0.38mm
0.5mm
0.525mm
0.625mm
1.0mm

±25μm
Or others 		Fine ground
Single side polished
Double side polished

Roughness: Ra<10A(1.0nm)
Roughness: Ra<5A(0.5nm) 		Inquiry Online


Silicon wafer/substrate

tags : Silicon wafer Silicon Crystal Substrate Si Crystal Substrate
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