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Silicon Wafer Si Crystal Substrate

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Silicon Wafer Si Crystal Substrate

Silicon wafer can be used in the production and deep processing of diodes, rectifier devices, circuits, and solar cell products. Its subsequent product integrated circuits and semiconductor separation devices have been widely used in various fields, and also occupy an important position in military electronic equipment.

Silicon wafer for manufacturing semiconductor Silicon devices for high power rectifiers, high power transistors, diodes, switching devices, and the like. It is a promising material in the development of energy. The growth methods of single crystal Silicon include Czochralski method (CZ), Floating Zone method (FZ), and epitaxial method. The Czochralski Monocrystalline Silicon wafer is mainly used for a semiconductor integrated circuit, a diode, an epitaxial wafer substrate, and a solar cell.

The main performance parameter
Crystal Structure	Cubic
Melting point（℃）	1420
Density	2.4（g/cm³）
Growth method	Float Zone (FZ) Czochralski (CZ) magnetic field Czochralski method (MCZ)
Dopant	Un-doped	Boron-doped	Phos-doped / As-doped
Conductivity Type	Intrinsic	P-type	N-type
Resistivity	>1000 Ω-cm >10000 Ω-cm	0.001~0.005 Ω-cm 0.01~0.09 Ω-cm 0.1~0.9 Ω-cm 1~10 Ω-cm 20~100 Ω-cm	0.001~0.005 Ω-cm 0.01~0.09 Ω-cm 0.1~0.9 Ω-cm 1~10 Ω-cm 20~100 Ω-cm
EPD	/	/	/
Oxygen Content（/cm³）	≤8x10¹⁷	≤8x10¹⁷	≤8x10¹⁷
Carbon Content（/cm³）	≤5x10¹⁶	≤5x10¹⁶	≤5x10¹⁶
Packing	Class-100 clean bag, class-1000 clean room
Special specification	We can customize Specific spcification upon requirements

Standard Specification
Product Name	Orientation	Standard Size	Thickness	Polishing
Silicon substrate/wafer (Un-doped or P-type or N-type)	<100> ±0.5° <110> ±0.5° <111> ±0.5° <211> ±0.5° Or other off-angle	10x10mm 10x5mm 5x5mm 20x20mm φ2" x 0.28mm φ3" x 0.38mm φ4" x 0.5mm φ6" x 0.625mm φ8" x 0.725mm φ12" x 0.775mm Or others	0.1mm 0.2mm 0.28mm 0.38mm 0.5mm 0.525mm 0.625mm 1.0mm ±25μm Or others	Fine ground Single side polished Double side polished Roughness: Ra<10A(1.0nm) Roughness: Ra<5A(0.5nm)	Inquiry Online

Silicon wafer/substrate

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